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Proceedings Paper

High performance quantum dot-quantum well infrared focal plane arrays
Author(s): S. Tsao; A. Myzaferi; M. Razeghi
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Paper Abstract

Quantum dot (QD) devices are a promising technology for high operating temperature detectors. We have studied InAs QDs embedded in an InGaAs/InAlAs quantum well structure on InP substrate for middle wavelength infrared detectors and focal plane arrays (FPAs). This combined dot-well structure has weak dot confinement of carriers, and as a result, the device behavior differs significantly from that in more common dot systems with stronger confinement. We report on our studies of the energy levels in the QDWIP devices and on QD-based detectors operating at high temperature with D* over 1010 cmHz1/2/W at 150 K operating temperature and high quantum efficiency over 50%. FPAs have been demonstrated operating at up to 200 K. We also studied two methods of adapting the QDWIP device to better accommodate FPA readout circuit limitations.

Paper Details

Date Published: 15 February 2010
PDF: 12 pages
Proc. SPIE 7605, Optoelectronic Integrated Circuits XII, 76050J (15 February 2010); doi: 10.1117/12.846252
Show Author Affiliations
S. Tsao, Northwestern Univ. (United States)
A. Myzaferi, Northwestern Univ. (United States)
M. Razeghi, Northwestern Univ. (United States)

Published in SPIE Proceedings Vol. 7605:
Optoelectronic Integrated Circuits XII
Louay A. Eldada; El-Hang Lee, Editor(s)

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