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Proceedings Paper

Alternative resist processes for LWR reduction in EUVL
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Paper Abstract

The main development issue for EUV resists is how to concurrently achieve high sensitivity, resolution below 22-nm half-pitch (hp), and low line width roughness (LWR) in the required fine patterns. Sensitivity and resolution continue to be improved through advances in EUV resist material research. However, through the material-approach, LWR remains a difficult issue. Thus, LWR-reduction from the point of view of alternative resist processes was investigated. As a result, LWR improvement was obtained utilizing alternative developer and rinse solutions. However, a difference in the LWR-reduction effect of these processes depending on the type of resist material used was observed.

Paper Details

Date Published: 23 March 2010
PDF: 6 pages
Proc. SPIE 7636, Extreme Ultraviolet (EUV) Lithography, 763633 (23 March 2010); doi: 10.1117/12.846073
Show Author Affiliations
Koji Kaneyama, Semiconductor Leading Edge Technologies, Inc. (Japan)
Kentaro Matsunaga, Semiconductor Leading Edge Technologies, Inc. (Japan)
Gousuke Shiraishi, Semiconductor Leading Edge Technologies, Inc. (Japan)
Julius Joseph Santillan, Semiconductor Leading Edge Technologies, Inc. (Japan)
Toshiro Itani, Semiconductor Leading Edge Technologies, Inc. (Japan)


Published in SPIE Proceedings Vol. 7636:
Extreme Ultraviolet (EUV) Lithography
Bruno M. La Fontaine, Editor(s)

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