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Proceedings Paper

Development of novel positive-tone resists for EUVL
Author(s): Takanori Owada; Hideaki Shiotani; Kayoko Aoyama; Takashi Kashiwamura; Mitsuru Shibata; Testuro Takeya; Hiroaki Oizumi; Toshiro Itani
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Paper Abstract

For improving resist performance, we have developed new Low-Molecular resists for which the substituted position and number of protecting group have no dispersion for controlling the chemical properties, such as solubility rate to alkaline developer. And we evaluated their Electron beam (EB) and Extreme Ultraviolet (EUV) patterning performance. The EUV lithographic evaluation of these resists was carried out at SFET (small field exposure tool) in Semiconductor Leading Edge Technologies Inc. (Selete). Newly synthesized resists have shown high performance of sensitivity and resolution under EB or EUV exposures. In this paper, we outline the design of new low molecular weight resists. The material properties, EUV outgassing analysis and the patterning capability of these newly synthesized low molecular weight resists are reported.

Paper Details

Date Published: 22 March 2010
PDF: 8 pages
Proc. SPIE 7636, Extreme Ultraviolet (EUV) Lithography, 763632 (22 March 2010); doi: 10.1117/12.846069
Show Author Affiliations
Takanori Owada, Idemitsu Kosan Co., Ltd. (Japan)
Hideaki Shiotani, Idemitsu Kosan Co., Ltd. (Japan)
Kayoko Aoyama, Idemitsu Kosan Co., Ltd. (Japan)
Takashi Kashiwamura, Idemitsu Kosan Co., Ltd. (Japan)
Mitsuru Shibata, Idemitsu Kosan Co., Ltd. (Japan)
Testuro Takeya, Idemitsu Kosan Co., Ltd. (Japan)
Hiroaki Oizumi, Semiconductor Leading Edge Technologies, Inc. (Japan)
Toshiro Itani, Semiconductor Leading Edge Technologies, Inc. (Japan)


Published in SPIE Proceedings Vol. 7636:
Extreme Ultraviolet (EUV) Lithography
Bruno M. La Fontaine, Editor(s)

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