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Proceedings Paper

Process parameter influence to negative tone development process for double patterning
Author(s): Shinji Tarutani; Sou Kamimura; Jiro Yokoyama
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Paper Abstract

Process parameter influence in resist process with negative tone development (NTD) to pattern size (CD), CD uniformity (CUD), and defectivity are studied to estimate the impact for process stability in high volume manufacturing (HVM) of semiconductor devices. Since double exposure process is one of the candidates in contact hole patterning, exposure to exposure delay was studied. There is a possibility to design the off-line system with NTD process, therefore, exposure - PEB delay and PEB - development delay were studied. As basic development parameter studies, development time, developer temperature, developer volume, and rinse time dependency on CD, CDU, and defectivity were investigated.

Paper Details

Date Published: 29 March 2010
PDF: 8 pages
Proc. SPIE 7639, Advances in Resist Materials and Processing Technology XXVII, 76391Q (29 March 2010); doi: 10.1117/12.846027
Show Author Affiliations
Shinji Tarutani, FUJIFILM Corp. (Japan)
Sou Kamimura, FUJIFILM Corp. (Japan)
Jiro Yokoyama, FUJIFILM Corp. (Japan)


Published in SPIE Proceedings Vol. 7639:
Advances in Resist Materials and Processing Technology XXVII
Robert D. Allen, Editor(s)

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