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Proceedings Paper

A novel lithography process for 3D (three-dimensional) interconnect using an optical direct-writing exposure system
Author(s): T. Azuma; M. Sekiguchi; M. Matsuo; A. Kawasaki; K. Hagiwara; H. Matsui; N. Kawamura; K. Kishimoto; A. Nakamura; Y. Washio
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Paper Abstract

A novel lithography process for 3D (Three-dimensional) interconnect was developed using an optical direct-writing exposure tool. A reflective IR (Infra-red) alignment system allows a direct detection of alignment marks both on front-side and back-side of wafer, and consequently allows feasible micro-fabrication for 3D interconnect using the reversed wafer. A combination of the optical direct-writing exposure tool of Dainippon Screen MFG. Co., Ltd. with the reflective IR alignment system and a high aspect chemically amplified resist of Tokyo Ohka Kogyo Co., Ltd. provides the lithography process exclusively for 12-inch wafer level 3D interconnect.

Paper Details

Date Published: 2 April 2010
PDF: 7 pages
Proc. SPIE 7637, Alternative Lithographic Technologies II, 76371O (2 April 2010); doi: 10.1117/12.846013
Show Author Affiliations
T. Azuma, Toshiba Corp. (Japan)
M. Sekiguchi, Toshiba Corp. (Japan)
M. Matsuo, Toshiba Corp. (Japan)
A. Kawasaki, Toshiba Corp. (Japan)
K. Hagiwara, Toshiba Corp. (Japan)
H. Matsui, Dainippon Screen Manufacturing Co., Ltd. (Japan)
N. Kawamura, Dainippon Screen Manufacturing Co., Ltd. (Japan)
K. Kishimoto, Dainippon Screen Manufacturing Co., Ltd. (Japan)
A. Nakamura, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Y. Washio, Tokyo Ohka Kogyo Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 7637:
Alternative Lithographic Technologies II
Daniel J. C. Herr, Editor(s)

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