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Proceedings Paper

Complementary use of organic and oxide semiconductors
Author(s): Jong H. Na; Masatoshi Kitamura; Yasuhiko Arakawa
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Paper Abstract

Complementary use of p-type organic and n-type oxide semiconductors is presented. First, we demonstrated complementary circuits using low-voltage operating high performance pentacene and amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs). The field-effect mobilities of the pentacene and a-IGZO transistors are 0.6 and 17.1 cm2/V s, respectively at an operating voltage of 10 V. A complementary inverter composed of these transistors exhibits good voltage transfer characteristics with a high gain of ~56. A five-stage ring oscillator with the inverters yields an output frequency of 200 Hz at 10 V, corresponding to a propagation delay of 1 ms. Second, together with the electrical device, we demonstrated an optoelectronic device, light-emitting diodes (LEDs), using organic/oxide hybrid junctions. The hybrid p-n junction LEDs are composed of N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4'-diamine (α-NPD) and sputtered ZnO. Similar with conventional p-n junction diodes, the hybrid junction shows a good current rectification and electroluminescence (EL) under forward bias. We found that the EL bands from the device agree well with the photoluminescence peaks from α-NPD and ZnO, implying the radiative recombination of injected charges occurs in both components of the junction.

Paper Details

Date Published: 15 February 2010
PDF: 11 pages
Proc. SPIE 7603, Oxide-based Materials and Devices, 760311 (15 February 2010); doi: 10.1117/12.846007
Show Author Affiliations
Jong H. Na, The Univ. of Tokyo (Japan)
Masatoshi Kitamura, The Univ. of Tokyo (Japan)
Yasuhiko Arakawa, The Univ. of Tokyo (Japan)


Published in SPIE Proceedings Vol. 7603:
Oxide-based Materials and Devices
Ferechteh Hosseini Teherani; David C. Look; Cole W. Litton; David J. Rogers, Editor(s)

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