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Proceedings Paper

Modeling of double patterning interactions in litho-cure-litho-etch (LCLE) processes
Author(s): Andreas Erdmann; Feng Shao; Juergen Fuhrmann; Andre Fiebach; George P. Patsis; Peter Trefonas
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Paper Abstract

This paper uses advanced modeling techniques to explore interactions between the two lithography processes in a lithocure- etch process and to qualify their impact on the final resist profiles and process performance. Specifically, wafer topography effects due to different optical properties of involved photoresist materials, linewidth variations in the second lithography step due to partial deprotection of imperfectly cured resist, and acid/quencher diffusion effects between resist materials are investigated. The paper highlights the results of the simulation work package of the European MD3 project.

Paper Details

Date Published: 3 March 2010
PDF: 12 pages
Proc. SPIE 7640, Optical Microlithography XXIII, 76400B (3 March 2010); doi: 10.1117/12.845849
Show Author Affiliations
Andreas Erdmann, Fraunhofer Institute for Integrated Systems and Device Technology (Germany)
Feng Shao, Fraunhofer Institute for Integrated Systems and Device Technology (Germany)
Juergen Fuhrmann, Weierstrass Institute for Applied Analysis and Stochastics (Germany)
Andre Fiebach, Weierstrass Institute for Applied Analysis and Stochastics (Germany)
George P. Patsis, Institute of Microelectronics (Greece)
Peter Trefonas, Dow Electronic Materials (United States)


Published in SPIE Proceedings Vol. 7640:
Optical Microlithography XXIII
Mircea V. Dusa; Will Conley, Editor(s)

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