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Proceedings Paper

On-chip integrated lasers in Al2O3:Er on silicon
Author(s): M. Pollnau; J. D. B. Bradley; F. Ay; E. H. Bernhardi; R. M. de Ridder; K. Wörhoff
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Paper Abstract

Erbium-doped aluminum oxide channel waveguides were fabricated on silicon substrates and their characteristics were investigated for Er concentrations ranging from 0.27 to 4.2 × 1020 cm-3. Background losses below 0.3 dB/cm at 1320 nm were measured. For optimum Er concentrations in the range of 1 to 2 × 1020 cm-3, internal net gain was obtained over a wavelength range of 80 nm (1500-1580 nm) and a peak gain of 2.0 dB/cm was measured at 1533 nm. Integrated Al2O3:Er3+ channel waveguide ring lasers were realized based on such waveguides. Output powers of up to 9.5 μW and slope efficiencies of up to 0.11 % were measured. Lasing was observed for a threshold diode-pump power as low as 6.4 mW. Wavelength selection in the range 1530 to 1557 nm was demonstrated by varying the length of the output coupler from the ring.

Paper Details

Date Published: 16 February 2010
PDF: 8 pages
Proc. SPIE 7605, Optoelectronic Integrated Circuits XII, 76050M (16 February 2010); doi: 10.1117/12.845842
Show Author Affiliations
M. Pollnau, Univ. of Twente (Netherlands)
J. D. B. Bradley, Univ. of Twente (Netherlands)
F. Ay, Univ. of Twente (Netherlands)
E. H. Bernhardi, Univ. of Twente (Netherlands)
R. M. de Ridder, Univ. of Twente (Netherlands)
K. Wörhoff, Univ. of Twente (Netherlands)


Published in SPIE Proceedings Vol. 7605:
Optoelectronic Integrated Circuits XII
Louay A. Eldada; El-Hang Lee, Editor(s)

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