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Proceedings Paper

Defectivity decrease in the photolithography process by AMC level reduction through implementation of novel filtration and monitoring solutions
Author(s): Nicolas Pic; Christophe Martin; Michel Vitalis; Thierry Calarnou; Daniel Camlay; Catherine Grosjean; Arnaud Lanier; Jost Kames; Alexander Acksel; Christophe Galvez
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Paper Abstract

A case study of drastic photolithography defectivity reduction on i-line and Deep-UV (DUV) tools is presented. We show how this result is linked with reduction of Airborne Molecular Contamination (AMC) in clean room by combined installation of novel type of filters on tracks and on the recirculation air treatment. The root cause was identified to be the presence of acetic acid in clean room created by a reaction with the filters (mounted on track tools to exclude ammonia contamination of the process) and the photo solvent itself (here mainly 1-methoxy-2-propanol acetate: PGMEA). Crucial for the project success was the use of a real time monitoring tool to detect the sources of Volatile Organic Compounds (VOC). Finally, a model of chemical reaction of satellite defects creation is discussed based on a Time of Flight Static SIMS (TOF SSIMS) analysis together with new AMC specification for acetic acid for the photolithography area.

Paper Details

Date Published: 2 April 2010
PDF: 12 pages
Proc. SPIE 7638, Metrology, Inspection, and Process Control for Microlithography XXIV, 76380M (2 April 2010); doi: 10.1117/12.845591
Show Author Affiliations
Nicolas Pic, STMicroelectronics (France)
Christophe Martin, STMicroelectronics (France)
Michel Vitalis, STMicroelectronics (France)
Thierry Calarnou, STMicroelectronics (France)
Daniel Camlay, STMicroelectronics (France)
Catherine Grosjean, STMicroelectronics (France)
Arnaud Lanier, STMicroelectronics (France)
Jost Kames, artemis control AG (Switzerland)
Alexander Acksel, artemis control AG (Switzerland)
Christophe Galvez, TERA Environnement (France)


Published in SPIE Proceedings Vol. 7638:
Metrology, Inspection, and Process Control for Microlithography XXIV
Christopher J. Raymond, Editor(s)

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