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Proceedings Paper

Electronic noise comparison of amorphous silicon current mode and voltage mode active pixel sensors for large area digital x-ray imaging
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Paper Abstract

A detailed experimental and theoretical investigation of noise in both current mode and voltage mode amorphous silicon (a-Si) active pixel sensors (APS) has been performed. Both flicker (1/f) and thermal are considered in this study. The experimental result in this paper emphasizes the computation of the output noise variance. The theoretical analysis shows that the voltage mode APS has an advantage over the current mode APS in terms of the flicker noise due to the operation of the readout process. The experimental data are compared to the theoretical analysis and are in good agreement.

Paper Details

Date Published: 22 March 2010
PDF: 12 pages
Proc. SPIE 7622, Medical Imaging 2010: Physics of Medical Imaging, 76223Q (22 March 2010); doi: 10.1117/12.845561
Show Author Affiliations
Dali Wu, Univ. of Waterloo (Canada)
Nader Safavian, Univ. of Waterloo (Canada)
Mohammad Y. Yazdandoost, Univ. of Waterloo (Canada)
Mohammad Hadi Izadi, Univ. of Waterloo (Canada)
Karim S. Karim, Univ. of Waterloo (Canada)


Published in SPIE Proceedings Vol. 7622:
Medical Imaging 2010: Physics of Medical Imaging
Ehsan Samei; Norbert J. Pelc, Editor(s)

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