Share Email Print
cover

Proceedings Paper

Carrier-induced optical index variations in InP waveguide diodes: the thermal effects contribution
Author(s): N. Saadsaoud; M. Zegaoui; D. Decoster; E. Dogheche; J. Chazelas
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Thermal-induced index variations are experimentally observed with Schottky diodes; they are opposite to the carrier induced ones, with an increase of optical index as high as 0.1, and a 1μs response time. It turns out that the thermal effect can be an important limiting factor to the optical index change. In this paper we evaluate each phenomenon separately (lifetime and thermal effects) and the influence of the thermal effects on the carrier induced index variations.

Paper Details

Date Published: 23 January 2010
PDF: 6 pages
Proc. SPIE 7608, Quantum Sensing and Nanophotonic Devices VII, 760811 (23 January 2010); doi: 10.1117/12.845549
Show Author Affiliations
N. Saadsaoud, Institut d'Electronique de Microélectronique et de Nanotechnologie, CNRS, Univ. de Lille (France)
M. Zegaoui, Institut d'Electronique de Microélectronique et de Nanotechnologie, CNRS, Univ. de Lille (France)
D. Decoster, Institut d'Electronique de Microélectronique et de Nanotechnologie, CNRS, Univ. de Lille (France)
E. Dogheche, Institut d'Electronique de Microélectronique et de Nanotechnologie, CNRS, Univ. de Lille (France)
J. Chazelas, Institut d'Electronique de Microélectronique et de Nanotechnologie, CNRS, Univ. de Lille (France)
Thales Airborne Systems (France)


Published in SPIE Proceedings Vol. 7608:
Quantum Sensing and Nanophotonic Devices VII
Manijeh Razeghi; Rengarajan Sudharsanan; Gail J. Brown, Editor(s)

© SPIE. Terms of Use
Back to Top