Share Email Print
cover

Proceedings Paper

Recent progress of 220-280 nm-band AlGaN based deep-UV LEDs
Author(s): Hideki Hirayama
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

We demonstrated 222-282 nm AlGaN-based efficient deep-ultraviolet (DUV) light-emitting diodes (LEDs) fabricated on low threading dislocation density (TDD) AlN template. Low TDD AlN on sapphire were realized by using ammonia (NH3) pulse-flow multilayer (ML) growth technique. We obtained quite high IQE (~80%) from slightly-Inincorporated (0.3%) InAlGaN QWs and obtained over 10 mW CW output power for 280 nm-band InAlGaN based LED. The maximum output power obtained were over 10 mW for 264-282 nm LEDs, 1.2-5mW for 240-256 nm LEDs and sub-milliwatt for 222-237 nm LEDs. The maximum external quantum efficiency (EQE) of 280 nm-band LED was 1.2%.

Paper Details

Date Published: 12 February 2010
PDF: 11 pages
Proc. SPIE 7617, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIV, 76171G (12 February 2010); doi: 10.1117/12.845512
Show Author Affiliations
Hideki Hirayama, RIKEN (Japan)
JST, CREST (Japan)


Published in SPIE Proceedings Vol. 7617:
Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIV
Klaus P. Streubel; Heonsu Jeon; Li-Wei Tu; Norbert Linder, Editor(s)

© SPIE. Terms of Use
Back to Top