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Proceedings Paper

Silicon nanowire metal-semiconductor-metal photodetectors
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Paper Abstract

Silicon nanowire photodetectors were fabricated for large area digital imaging applications. An array of silicon nanowires fabricated by plasma enhanced chemical vapor deposition (PECVD) was incorporated into lateral metalsemiconductor- metal (MSM) photodetectors with 2 μm electrode spacing. A collection efficiency of up to 0.36 and responsivity of 0.136 was measured using an applied bias of -10V. The rise time in response to a blue LED light source was measured to be 35.2 μs.

Paper Details

Date Published: 23 March 2010
PDF: 8 pages
Proc. SPIE 7622, Medical Imaging 2010: Physics of Medical Imaging, 76224M (23 March 2010); doi: 10.1117/12.845503
Show Author Affiliations
Michael M. Adachi, Univ. of Waterloo (Canada)
Kai Wang, Univ. of Waterloo (Canada)
Feng Chen, Univ. of Waterloo (Canada)
Karim S. Karim, Univ. of Waterloo (Canada)


Published in SPIE Proceedings Vol. 7622:
Medical Imaging 2010: Physics of Medical Imaging
Ehsan Samei; Norbert J. Pelc, Editor(s)

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