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Proceedings Paper

Junction temperature measurement on light-emitting diodes and its application
Author(s): S. M. He; B. Zhang; N. Li; S. S. Liu; T. Zhang; W. Lu
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Paper Abstract

Recently, the GaN based LED white light illumination technology has been developed rapidly. It is required to measure the p-n junction temperature of LED which has been encapsulated in the lamp with the temperature measurement error less than 1K. We present a spectroscopy approach to measure this p-n junction temperature of LED encapsulated in the lamp. The electroluminescence peak shift is used to determine the temperature difference between the junction and the ambient. At ambient temperature of 300K, the junction temperature can be determined by the formula of T=300+27.8▵λp-1.22▵λp 2 with the unit of temperature T in K and electroluminescence peak shift ▵λp in nm. This method has been used on the high power lamp made by LED. The LED lamp has been fabricated for the illuminated application on the satellite and the spacecraft in China.

Paper Details

Date Published: 12 October 2009
PDF: 6 pages
Proc. SPIE 7518, Photonics and Optoelectronics Meetings (POEM) 2009: Solar Cells, Solid State Lighting, and Information Display Technologies, 75180N (12 October 2009); doi: 10.1117/12.845455
Show Author Affiliations
S. M. He, Shanghai Institute of Optics and Fine Mechanics (China)
B. Zhang, Shanghai Institute of Optics and Fine Mechanics (China)
N. Li, Shanghai Institute of Optics and Fine Mechanics (China)
S. S. Liu, Shanghai Institute of Optics and Fine Mechanics (China)
T. Zhang, Shanghai Institute of Optics and Fine Mechanics (China)
W. Lu, Shanghai Institute of Optics and Fine Mechanics (China)


Published in SPIE Proceedings Vol. 7518:
Photonics and Optoelectronics Meetings (POEM) 2009: Solar Cells, Solid State Lighting, and Information Display Technologies
Michael Grätzel; Hiroshi Amano; Chin Hsin Chen; Changqing Chen; Peng Wang, Editor(s)

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