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Proceedings Paper

Improved performance of near-ultraviolet InGaN/AlGaN LEDs with various insertion structures
Author(s): Dong-Sing Wuu; Wen-Yu Lin; Ying-Chiuan Tsai; Shih-Cheng Huang; Ray-Hua Horng; Chien-Min Liu
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Paper Abstract

In this study, two approaches using various insertion structures are proposed for the near-UV LEDs. One is through a single MOCVD process where a heavily Mg-doped GaN insertion layer (HD-IL) technique is employed to improve crystalline quality of the GaN layer and followed by rest of required GaN-based LED structure. Another approach was demonstrated by the near-UV LEDs with an embedded distributed SiO2-disk structure. The periodically spaced hexagonal disk-shaped SiO2 mask array was deposited on the GaN/sapphire template and followed by the MOCVD regrowth process. These improvements contribute the high-performance 380-nm LEDs with enhanced output powers by 20-40% in magnitude.

Paper Details

Date Published: 12 February 2010
PDF: 7 pages
Proc. SPIE 7617, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIV, 76171H (12 February 2010); doi: 10.1117/12.845439
Show Author Affiliations
Dong-Sing Wuu, National Chung Hsing Univ. (Taiwan)
Wen-Yu Lin, National Chung Hsing Univ. (Taiwan)
Ying-Chiuan Tsai, National Chung Hsing Univ. (Taiwan)
Shih-Cheng Huang, National Chung Hsing Univ. (Taiwan)
Ray-Hua Horng, National Cheng Kung Univ. (Taiwan)
Chien-Min Liu, National Chiao Tung Univ. (Taiwan)


Published in SPIE Proceedings Vol. 7617:
Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIV
Klaus P. Streubel; Heonsu Jeon; Li-Wei Tu; Norbert Linder, Editor(s)

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