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Proceedings Paper

The improvement of ohmic contact of Ti/Al/Ni/Au to AlGaN/GaN HEMT by multi-step annealing method
Author(s): Qian Feng; Li-mei Li; Yue Hao; Zhi-wei Bi
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Paper Abstract

A multi-step rapid thermal annealing process of Ti/Al/Ni/Au was investigated for ohmic contact of AlGaN/GaN high electron mobility transistor(HEMT).The samples were studied by Transmission Line Model(TLM),Scanning Electron Microscopy(SEM) and Auger Electron Spectroscopy(AES) measurements. By the multi-step annealing process, the specific contact resistance was decreased and the surface morphology was improved. The AES measurements showed that the limitation indiffusion of Au and outdiffusion of Al were account for the surface morphology improvement.

Paper Details

Date Published: 13 October 2009
PDF: 9 pages
Proc. SPIE 7518, Photonics and Optoelectronics Meetings (POEM) 2009: Solar Cells, Solid State Lighting, and Information Display Technologies, 751814 (13 October 2009); doi: 10.1117/12.845422
Show Author Affiliations
Qian Feng, Xidian Univ. (China)
Li-mei Li, Xidian Univ. (China)
Yue Hao, Xidian Univ. (China)
Zhi-wei Bi, Xidian Univ. (China)


Published in SPIE Proceedings Vol. 7518:
Photonics and Optoelectronics Meetings (POEM) 2009: Solar Cells, Solid State Lighting, and Information Display Technologies
Michael Grätzel; Hiroshi Amano; Chin Hsin Chen; Changqing Chen; Peng Wang, Editor(s)

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