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Proceedings Paper

Effects of O2/Ar ratio and UV illumination on the properties of radio frequency sputtered TeOx thin films
Author(s): Xiaoyong Wang; Yongyou Geng; Donghong Gu
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Paper Abstract

Tellurium oxide (TeOx) thin films have been prepared by rf reactively sputtering deposition by using a tellurium target under Ar-O2 gas mixture. The effect of O2/Ar ratio on the structure and optical properties was investigated by XRD, FTIR and optical transmission measurement. With increasing the O2/Ar ratio the optical band gap of thin films increased from 0.59eV to 0.87eV, but the Urbach energy firstly decreased, then increased. After UV illumination, the blue and red shifts of absorption edge were observed. And the annealing of as-deposited films also was done. It was proposed that the blue and red shifts may be related with the Urbach energy. All the results can be attributed to the rearrangement of bonding network with the variation of stoichiometry of tellurium oxide films.

Paper Details

Date Published: 23 October 2009
PDF: 8 pages
Proc. SPIE 7517, Photonics and Optoelectronics Meetings (POEM) 2009: Optical Storage and New Storage Technologies, 751706 (23 October 2009); doi: 10.1117/12.845411
Show Author Affiliations
Xiaoyong Wang, Shanghai Institute of Optics and Fine Mechanics (China)
Yongyou Geng, Shanghai Institute of Optics and Fine Mechanics (China)
Donghong Gu, Shanghai Institute of Optics and Fine Mechanics (China)


Published in SPIE Proceedings Vol. 7517:
Photonics and Optoelectronics Meetings (POEM) 2009: Optical Storage and New Storage Technologies
Masud Mansuripur; Changsheng Xie; Xiangshui Miao, Editor(s)

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