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Proceedings Paper

Determination of nonradiative recombination in high quantum efficiency GaAs/InGaP heterostructures
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Paper Abstract

We characterize high quantum efficiency double GaAs/InGaP heterostructures used in semiconductor laser cooling. To identify potential samples for laser cooling, measuring the nonradiative recombination rate coefficient is necessary. We describe a technique called power dependent photoluminescence measurement, which when combined with timeresolved photoluminescence lifetime determines the nonradiative recombination coefficient.

Paper Details

Date Published: 18 February 2010
PDF: 9 pages
Proc. SPIE 7614, Laser Refrigeration of Solids III, 76140E (18 February 2010); doi: 10.1117/12.845054
Show Author Affiliations
Chia-Yeh Li, The Univ. of New Mexico (United States)
Chengao Wang, The Univ. of New Mexico (United States)
Michael P. Hasselbeck, The Univ. of New Mexico (United States)
Mansoor Sheik-Bahae, The Univ. of New Mexico (United States)
Kevin J. Malloy, The Univ. of New Mexico (United States)


Published in SPIE Proceedings Vol. 7614:
Laser Refrigeration of Solids III
Richard I. Epstein; Mansoor Sheik-Bahae, Editor(s)

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