Share Email Print
cover

Proceedings Paper

Characterization of external quantum efficiency and absorption efficiency in GaAs/ InGaP double heterostructures for laser cooling applications
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The state of current research in laser cooling of semiconductors is reviewed. Emphasis is placed on the characterization of external quantum efficiency and absorption efficiency in GaAs/InGaP double heterostuctures. New experimental results will be presented that characterize device operation as a function of laser excitation power and temperature. Optimum carrier density is obtained independently and used as a screening tool for sample quality. The crucial importance of parasitic background absorption is discussed.

Paper Details

Date Published: 18 February 2010
PDF: 13 pages
Proc. SPIE 7614, Laser Refrigeration of Solids III, 76140B (18 February 2010); doi: 10.1117/12.845053
Show Author Affiliations
Chengao Wang, The Univ. of New Mexico (United States)
Michael P. Hasselbeck, The Univ. of New Mexico (United States)
Chia-Yeh Li, The Univ. of New Mexico (United States)
Mansoor Sheik-Bahae, The Univ. of New Mexico (United States)


Published in SPIE Proceedings Vol. 7614:
Laser Refrigeration of Solids III
Richard I. Epstein; Mansoor Sheik-Bahae, Editor(s)

© SPIE. Terms of Use
Back to Top