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Proceedings Paper

Oxide thin film transistors on novel flexible substrates
Author(s): S. J. Pearton; Wantae Lim; Erica Douglas; Fan Ren; Young Woo Heo; D. P. Norton
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Paper Abstract

Enhancement-mode TFTs based on amorphous InGaZnO channel were fabricated on paper, glass or plastic substrates at low temperature (< 100°C). The TFTs operated in enhancement mode and showed low operating voltages of 0.5-2.5 V, drain current on-to-off ratios of ~ 105, sub-threshold gate-voltage swing of 0.25-0.5 V.decade-1, and high saturation mobilities of 5-12 cm2.V-1.s-1. The devices exhibited small shifts during 1000 hours aging time at room temperature. Significant challenges remain, including improving the stability of the devices under bias, lowering the operating voltages, replacing metal contacts with conducting polymers that should be more resistant to cracking on rolling-up of flexible substrates and developing large-area printing processes that are compatible with manufacturing these devices on very large areas.

Paper Details

Date Published: 15 February 2010
PDF: 11 pages
Proc. SPIE 7603, Oxide-based Materials and Devices, 760315 (15 February 2010); doi: 10.1117/12.844935
Show Author Affiliations
S. J. Pearton, Univ. of Florida (United States)
Wantae Lim, Univ. of Florida (United States)
Erica Douglas, Univ. of Florida (United States)
Fan Ren, Univ. of Florida (United States)
Young Woo Heo, Kyungpook National Univ. (Korea, Republic of)
D. P. Norton, Univ. of Florida (United States)


Published in SPIE Proceedings Vol. 7603:
Oxide-based Materials and Devices
Ferechteh Hosseini Teherani; David C. Look; Cole W. Litton; David J. Rogers, Editor(s)

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