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Proceedings Paper

Q-switched all-solid-state lasers and application in processing of thin-film solar cell
Author(s): Liangqing Liu; Feng Wang
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Paper Abstract

Societal pressure to renewable clean energy is increasing which is expected to be used as part of an overall strategy to address global warming and oil crisis. Photovoltaic energy conversion devices are on a rapidly accelerating growth path driven by government, of which the costs and prices lower continuously. The next generation thin-film devices are considered to be more efficiency and greatly reduced silicon consumption, resulting in dramatically lower per unit fabrication costs. A key aspect of these devices is patterning large panels to create a monolithic array of series-interconnected cells to form a low current, high voltage module. This patterning is accomplished in three critical scribing processes called P1, P2, and P3. All-solid-state Q-switched lasers are the technology of choice for these processes, due to their advantages of compact configuration, high peak-value power, high repeat rate, excellent beam quality and stability, delivering the desired combination of high throughput and narrow, clean scribes. The end pumped all-solid-state lasers could achieve 1064nm IR resources with pulse width of nanoseconds adopting acoustic-optics Q-switch, shorter than 20ns. The repeat rate is up to 100kHz and the beam quality is close to diffraction limit. Based on this, 532nm green lasers, 355nm UV lasers and 266nm DUV lasers could be carried out through nonlinear frequency conversion. Different wave length lasers are chose to process selective materials. For example, 8-15 W IR lasers are used to scribe the TCO film (P1); 1-5 W green lasers are suitable for scribing the active semiconductor layers (P2) and the back contact layers (P3). Our company, Wuhan Lingyun Photo-electronic System Co. Ltd, has developed 20W IR and 5W green end-pumped Q-switched all-solid-state lasers for thin-film solar industry. Operating in high repeat rates, the speed of processing is up to 2.0 m/s.

Paper Details

Date Published: 21 October 2009
PDF: 6 pages
Proc. SPIE 7515, Photonics and Optoelectronics Meetings (POEM) 2009: Industry Lasers and Applications, 75150J (21 October 2009); doi: 10.1117/12.844907
Show Author Affiliations
Liangqing Liu, Lingyun Photo-Electronic System Co. Ltd (China)
Feng Wang, Lingyun Photo-Electronic System Co. Ltd (China)


Published in SPIE Proceedings Vol. 7515:
Photonics and Optoelectronics Meetings (POEM) 2009: Industry Lasers and Applications
Dianyuan Fan; Horst Weber; Xiao Zhu; Dongsheng Jiang; Xiaochun Xiao; Weiwei Dong; Desheng Xu, Editor(s)

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