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Proceedings Paper

Reduction in operating voltage of UV laser diode
Author(s): Tomoki Ichikawa; Kenichiro Takeda; Yuji Ogiso; Kengo Nagata; Motoaki Iwaya; Satoshi Kamiyama; Hiroshi Amano; Isamu Akasaki; Harumasa Yoshida; Masakazu Kuwabara; Yoji Yamashita; Hirofumi Kan
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Paper Abstract

We fabricated UV laser diodes (LDs). A high-temperature annealing at 850 °C for a short duration was found to be very effective for reducing the series resistance of an n-type contact. By applying high-temperature annealing, the operating voltage of an UV LD was reduced from 10.7 V to 9.5 V at a forward current of 300 mA.

Paper Details

Date Published: 17 March 2010
PDF: 8 pages
Proc. SPIE 7602, Gallium Nitride Materials and Devices V, 760223 (17 March 2010); doi: 10.1117/12.843910
Show Author Affiliations
Tomoki Ichikawa, Meijo Univ. (Japan)
Kenichiro Takeda, Meijo Univ. (Japan)
Yuji Ogiso, Meijo Univ. (Japan)
Kengo Nagata, Meijo Univ. (Japan)
Motoaki Iwaya, Meijo Univ. (Japan)
Satoshi Kamiyama, Meijo Univ. (Japan)
Hiroshi Amano, Meijo Univ. (Japan)
Isamu Akasaki, Meijo Univ. (Japan)
Harumasa Yoshida, Hamamatsu Photonics K.K. (Japan)
Masakazu Kuwabara, Hamamatsu Photonics K.K. (Japan)
Yoji Yamashita, Hamamatsu Photonics K.K. (Japan)
Hirofumi Kan, Hamamatsu Photonics K.K. (Japan)


Published in SPIE Proceedings Vol. 7602:
Gallium Nitride Materials and Devices V
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Cole W. Litton; Joachim Piprek; Euijoon Yoon, Editor(s)

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