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Proceedings Paper

Sub-micron machining of semiconductors: femtosecond surface ripples on GaAs by 2 μm laser light
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Paper Abstract

In recent years, a major interest in surface as well as bulk property modification of semiconductors using laser irradiation has developed. A.Kar et al. [1][2] and E.Mazur et al. [3] have shown introduction and control of dopants by long-pulse laser irradiation and increased absorption due to femtosecond irradiation respectively. With the development of mid-IR sources, a new avenue of irradiation can be established in a spectral region where the semiconductor material is highly transparent to the laser radiation. The characterization of the light-matter-interaction in this regime is of major interest. We will present a study on GaAs and its property changes due to pulsed laser irradiation ranging from the visible to the mid-IR region of the spectrum. Long-pulse as well as ultra-short pulse radiation is used to modify the material. Parameters such as ablation threshold, radiation penetration depth and thermal diffusion will be discussed.

Paper Details

Date Published: 25 February 2010
PDF: 8 pages
Proc. SPIE 7590, Micromachining and Microfabrication Process Technology XV, 759004 (25 February 2010); doi: 10.1117/12.843701
Show Author Affiliations
Mark Ramme, The College of Optics and Photonics, Univ. of Central Florida (United States)
Jiyeon Choi, The College of Optics and Photonics, Univ. of Central Florida (United States)
Troy Anderson, The College of Optics and Photonics, Univ. of Central Florida (United States)
Ilja Mingareev, The College of Optics and Photonics, Univ. of Central Florida (United States)
Martin Richardson, The College of Optics and Photonics, Univ. of Central Florida (United States)


Published in SPIE Proceedings Vol. 7590:
Micromachining and Microfabrication Process Technology XV
Mary Ann Maher; Jung-Chih Chiao; Paul J. Resnick, Editor(s)

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