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Proceedings Paper

Improving the operating temperature of quantum dots-in-a-well detectors
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Paper Abstract

In this paper, we report some of our recent results on improving the operating temperature of dots-in-a-well (DWELL) infrared photodetectors. This was achieved by engineering the dot geometry and the interrelated quantum confinement by varying the growth conditions and composition of the subsequent capping of the quantum dots (QDs). The influence of these conditions was determined by examining the optical properties of the QDs directly and indirectly with their function in a DWELL IR photodetector. Spectral response was observed until 250K with spectral response peak at 3.2μm, and the peak detectivity is 1×109 cmHz1/2/W at 77K and ~ 1e8 cmHz1/2/W at 250K. By varying the external bias, the DWELL heterostructure allows for the manipulation of the operating wavelength. This tunability is a critical stepping stone towards creating multicolor imaging systems that can be used to take images at multiple wavelengths from each pixel in a focal plane array.

Paper Details

Date Published: 23 January 2010
PDF: 7 pages
Proc. SPIE 7608, Quantum Sensing and Nanophotonic Devices VII, 76081Y (23 January 2010); doi: 10.1117/12.843676
Show Author Affiliations
Jiayi Shao, Ctr. for High Technology Materials, The Univ. of New Mexico (United States)
Thomas E. Vandervelde, Ctr. for High Technology Materials, The Univ. of New Mexico (United States)
Woo-yong Jang, Ctr. for High Technology Materials, The Univ. of New Mexico (United States)
Andreas Stintz, Ctr. for High Technology Materials, The Univ. of New Mexico (United States)
Sanjay Krishna, Ctr. for High Technology Materials, The Univ. of New Mexico (United States)


Published in SPIE Proceedings Vol. 7608:
Quantum Sensing and Nanophotonic Devices VII
Manijeh Razeghi; Rengarajan Sudharsanan; Gail J. Brown, Editor(s)

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