Share Email Print
cover

Proceedings Paper

Efficiency enhancement of GaN-based LED using nanotechnology
Author(s): C. H. Chiu; M. A. Tsai; Peichen Yu; H. C. Kuo
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

We had demonstrated several novel methods to improve the luminescence efficiency of the GaN-based light emitting diodes (LEDs). The high-aspect-ratio GaN nanorods, formed by spun nano-spheres and inductively coupled plasma (ICP) etching, contributed to an enhancement in light output power and better light directionality. Nevertheless, the etching process would affect the electrical properties. We then attempt to rough the surface by synthesizing ZnO nanorods in liquid solution at room temperature. The LEDs with ZnO nanorods enjoyed high extraction efficiency and comparable electric performance than that without nanorods. At third part, we fabricate a high efficiency GaN-based LED by regrowth on SiO2 nanorod patterned sapphire substrate. It could improve the light extraction and internal efficiencies simultaneously.

Paper Details

Date Published: 13 October 2009
PDF: 9 pages
Proc. SPIE 7518, Photonics and Optoelectronics Meetings (POEM) 2009: Solar Cells, Solid State Lighting, and Information Display Technologies, 75180A (13 October 2009); doi: 10.1117/12.843671
Show Author Affiliations
C. H. Chiu, National Chiao Tung Univ. (Taiwan)
M. A. Tsai, National Chiao Tung Univ. (Taiwan)
Peichen Yu, National Chiao Tung Univ. (Taiwan)
H. C. Kuo, National Chiao Tung Univ. (Taiwan)


Published in SPIE Proceedings Vol. 7518:
Photonics and Optoelectronics Meetings (POEM) 2009: Solar Cells, Solid State Lighting, and Information Display Technologies
Michael Grätzel; Hiroshi Amano; Chin Hsin Chen; Changqing Chen; Peng Wang, Editor(s)

© SPIE. Terms of Use
Back to Top