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Proceedings Paper

Plasmon-assisted dissipation of LO-mode heat in nitride 2DEG channels
Author(s): Arvydas Matulionis; Juozapas Liberis; Hadis Morkoç
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Paper Abstract

A bottleneck for heat dissipation is discussed in terms of plasmon-assisted decay of nonequilibrium longitudinal optical phonons launched by hot electrons. According to experiment at low and moderate electric fields, the fastest decay takes place at electron density of ~6.7×1012 cm-2 and ~2.7×1012 cm-2 for heterostructures with 2DEG channels located in GaN and GaInAs, respectively. Hot-electron temperature and gate voltage can be used to shift the optimal density. A GaN-based heterostructure field effect transistor degrades slower when dissipation of the LO-mode heat is faster.

Paper Details

Date Published: 10 March 2010
PDF: 6 pages
Proc. SPIE 7602, Gallium Nitride Materials and Devices V, 76020H (10 March 2010); doi: 10.1117/12.843659
Show Author Affiliations
Arvydas Matulionis, Puslaidininkiu Fizikos Institutas (Lithuania)
Juozapas Liberis, Puslaidininkiu Fizikos Institutas (Lithuania)
Hadis Morkoç, Virginia Commonwealth Univ. (United States)


Published in SPIE Proceedings Vol. 7602:
Gallium Nitride Materials and Devices V
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Cole W. Litton; Joachim Piprek; Euijoon Yoon, Editor(s)

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