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Proceedings Paper

Simulation and analysis of GaN-based light-emitting diodes with diamond shaped
Author(s): Bin Cao; Pei Wang; Zhiyin Gan; Sheng Liu
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Paper Abstract

Improving light extraction efficiency (LEE) is important to enhance efficiency of light-emitting diodes (LEDs) and the issue has been studied comprehensively. A GaN-based LED chip with diamond shaped is presented in this letter and LEE was analyzed. The LEEs of the conventional chip and flip chip with different angle of slant from 0° to 20° were obtained through Monte-Carlo ray tracing method, which is a useful and efficient way in studying the LEE of LED. The results show that the LEE of the chip with obliquity enhanced by 20.2% compared with conventional rectangle chip with mirror bottom surface, however, there is no improve of the LEEs of flip chip and conventional chip with diffuse surface.

Paper Details

Date Published: 12 October 2009
PDF: 5 pages
Proc. SPIE 7518, Photonics and Optoelectronics Meetings (POEM) 2009: Solar Cells, Solid State Lighting, and Information Display Technologies, 75181D (12 October 2009); doi: 10.1117/12.843471
Show Author Affiliations
Bin Cao, Huazhong Univ. of Science and Technology (United States)
Pei Wang, Huazhong Univ. of Science and Technology (United States)
Zhiyin Gan, Huazhong Univ. of Science and Technology (United States)
Sheng Liu, Huazhong Univ. of Science and Technology (United States)


Published in SPIE Proceedings Vol. 7518:
Photonics and Optoelectronics Meetings (POEM) 2009: Solar Cells, Solid State Lighting, and Information Display Technologies
Michael Grätzel; Hiroshi Amano; Chin Hsin Chen; Changqing Chen; Peng Wang, Editor(s)

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