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Proceedings Paper

Simulation and experiment on probe inducing surface plasmon resonance nanolithography system
Author(s): Chengqiang Zhao; Wendong Xu
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Paper Abstract

The local field enhancement generates in the vicinity of the tip which has approached to surface plasmon resonance (SPR) region of the sample. The power of the local field enhancement could be utilized to pattern the sample, and this new lithography method is called probe inducing surface plasmon resonance nanolithography (PSPRN). Owing to the high energy density of local field enhancement and super-diffraction limiting character, PSPRN has the advantages of low power consumption and high resolution. The influence of various film parameters on SPR was simulated by eigenmatrix method in this paper. Through analysis and by comparison, glass ZF6, silver (Ag), silicon dioxide (SiO2) and silver oxide (AgOx) were selected as the materials for prism, metal layers, protecting layers and recoding layers respectively. A PSPRN experiment was implemented on an atomic force microscope (AFM). In the experiment, samples with single-layer, double-layer, and three-layer structures were researched. Holes of 100nm / 18nm, 75nm / 7nm and 195nm / 7.5nm (diameter/depth) were written into the three structures respectively. However, the result was not ideal with three-layer structure. The influence of diverse parameters on the size of lithography point has been analyzed, which could help providing the theory basis for improving experiment equipment.

Paper Details

Date Published: 23 October 2009
PDF: 8 pages
Proc. SPIE 7517, Photonics and Optoelectronics Meetings (POEM) 2009: Optical Storage and New Storage Technologies, 75170P (23 October 2009); doi: 10.1117/12.843103
Show Author Affiliations
Chengqiang Zhao, Shanghai Institute of Optics and Fine Mechanics (China)
Wendong Xu, Shanghai Institute of Optics and Fine Mechanics (China)


Published in SPIE Proceedings Vol. 7517:
Photonics and Optoelectronics Meetings (POEM) 2009: Optical Storage and New Storage Technologies
Masud Mansuripur; Changsheng Xie; Xiangshui Miao, Editor(s)

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