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Proceedings Paper

1/f noise: a window to HFET stability
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Paper Abstract

A new stability criterion for heterojunction field effect transistors (HFETs) is introduced and discussed in terms of our own stress-induced degradation experiments on the GaN varieties. The new criterion explains how to choose the sheet conductance of the 2 DEG electron plasma in the channel and the temperature dependence of the spontaneous polarization in the gate insulation for maximal stability against stress-induced degradation. According to this criterion, for maximal stability against thermal breakdown, the sheet conductance is chosen to be in a well defined vicinity of the resonance of the optical phonons with the plasma frequency of the electrons in the channel. The first steps toward studying this concept experimentally have been taken by monitoring the 1/f noise of the HFETs both at baseband and through phase noise, i.e., with exponential modulation, and comparing to the extent possible at this point with the results of the quantum 1/f noise calculation. Our measurements of 1/f noise on pristine devices and on stressed devices, degraded by sustained high drain bias, show that even a small 8% decrease in the maximal drain current produces some 5- 10 dB increase in the 1/f noise power. The latter is thus a much more sensitive indicator of damage. The quantum electrodynamic (QED)- and quantum lattice-dynamic (QLD) quantum 1/f noise formulas have been refined for the case of AlGaN/GaN HFETs through a better definition of the coherence parameters s and s'.

Paper Details

Date Published: 12 March 2010
PDF: 13 pages
Proc. SPIE 7602, Gallium Nitride Materials and Devices V, 76020M (12 March 2010); doi: 10.1117/12.842948
Show Author Affiliations
Peter H. Handel, Univ. of Missouri-St. Louis (United States)
Taher Sherif, Univ. of Missouri-St. Louis (United States)
Cemil Kayis, Virginia Commonwealth Univ. (United States)
Jacob Leach, Virginia Commonwealth Univ. (United States)
Congyong Zhu, Virginia Commonwealth Univ. (United States)
Hadis Morkoç, Virginia Commonwealth Univ. (United States)


Published in SPIE Proceedings Vol. 7602:
Gallium Nitride Materials and Devices V
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Cole W. Litton; Joachim Piprek; Euijoon Yoon, Editor(s)

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