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Proceedings Paper

Comparison of nonlinear absorption and carrier recombination times in GaAs grown by hydride vapor phase epitaxy and Bridgman processes
Author(s): Leonel P. Gonzalez; Joel Murray; Amelia Carpenter; Derek Upchurch; Jacob O. Barnes; Peter G. Schunemann; Kevin Zawilski; Shekhar Guha
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Paper Abstract

μA 760 μm thick GaAs crystal was grown using HVPE. Transmission spectrum of this sample showed minimal absorption for light having photon energy below the bandgap energy, indicating the absence of the EL2 defects commonly found in Bridgman grown samples. Irradiance dependent absorption measured at 1.535 μm using 100 ns duration laser pulses showed increased nonlinear absorption in the HVPE grown GaAs compared to Bridgman grown samples. The dominant nonlinear absorption process in both samples was absorption due to free carriers generated by two-photon absorption. The HVPE grown sample showed higher nonlinear absorption due to longer carrier lifetimes.

Paper Details

Date Published: 18 February 2010
PDF: 5 pages
Proc. SPIE 7582, Nonlinear Frequency Generation and Conversion: Materials, Devices, and Applications IX, 75821A (18 February 2010); doi: 10.1117/12.842947
Show Author Affiliations
Leonel P. Gonzalez, Air Force Research Lab. (United States)
Joel Murray, Air Force Research Lab. (United States)
General Dynamics Information Technology (United States)
Amelia Carpenter, Air Force Research Lab. (United States)
General Dynamics Information Technology (United States)
Derek Upchurch, Air Force Research Lab. (United States)
General Dynamics Information Technology (United States)
Jacob O. Barnes, Air Force Research Lab. (United States)
General Dynamics Information Technology (United States)
Peter G. Schunemann, BAE Systems (United States)
Kevin Zawilski, BAE Systems (United States)
Shekhar Guha, Air Force Research Lab. (United States)


Published in SPIE Proceedings Vol. 7582:
Nonlinear Frequency Generation and Conversion: Materials, Devices, and Applications IX
Peter E. Powers, Editor(s)

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