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Proceedings Paper

Band structure calculation of dilute-As GaNAs by first principle
Author(s): Xiao-Hang Li; Hua Tong; Hongping Zhao; Nelson Tansu
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Paper Abstract

We present the band structure calculation of dilute-As GaNAs alloys (from 0% to 6.25% As) by employing the densityfunctional theory that adopts the local density approximation. Our studies indicate that the GaNAs shows a direct bandgap property. A small incorporation of As into the GaN alloy leads to the a significant decrease in the energy gap, which allows direct band gap transition covering from 3.47 eV (0% As) down to 1.93eV (6.25% As). The finding implies the dilute-As GaNAs alloy as an excellent candidate for the active material for optoelectronics that covers the entire visible spectral regime. The carrier effective masses of dilute-As GaNAs alloys are also presented.

Paper Details

Date Published: 25 February 2010
PDF: 8 pages
Proc. SPIE 7597, Physics and Simulation of Optoelectronic Devices XVIII, 75970H (25 February 2010); doi: 10.1117/12.842931
Show Author Affiliations
Xiao-Hang Li, Lehigh Univ. (United States)
Hua Tong, Lehigh Univ. (United States)
Hongping Zhao, Lehigh Univ. (United States)
Nelson Tansu, Lehigh Univ. (United States)


Published in SPIE Proceedings Vol. 7597:
Physics and Simulation of Optoelectronic Devices XVIII
Bernd Witzigmann; Fritz Henneberger; Yasuhiko Arakawa; Marek Osinski, Editor(s)

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