Share Email Print

Proceedings Paper

Band structure calculation of dilute-As GaNAs by first principle
Author(s): Xiao-Hang Li; Hua Tong; Hongping Zhao; Nelson Tansu
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

We present the band structure calculation of dilute-As GaNAs alloys (from 0% to 6.25% As) by employing the densityfunctional theory that adopts the local density approximation. Our studies indicate that the GaNAs shows a direct bandgap property. A small incorporation of As into the GaN alloy leads to the a significant decrease in the energy gap, which allows direct band gap transition covering from 3.47 eV (0% As) down to 1.93eV (6.25% As). The finding implies the dilute-As GaNAs alloy as an excellent candidate for the active material for optoelectronics that covers the entire visible spectral regime. The carrier effective masses of dilute-As GaNAs alloys are also presented.

Paper Details

Date Published: 25 February 2010
PDF: 8 pages
Proc. SPIE 7597, Physics and Simulation of Optoelectronic Devices XVIII, 75970H (25 February 2010); doi: 10.1117/12.842931
Show Author Affiliations
Xiao-Hang Li, Lehigh Univ. (United States)
Hua Tong, Lehigh Univ. (United States)
Hongping Zhao, Lehigh Univ. (United States)
Nelson Tansu, Lehigh Univ. (United States)

Published in SPIE Proceedings Vol. 7597:
Physics and Simulation of Optoelectronic Devices XVIII
Bernd Witzigmann; Fritz Henneberger; Yasuhiko Arakawa; Marek Osinski, Editor(s)

© SPIE. Terms of Use
Back to Top