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Proceedings Paper

Quantum dots (QDs) immobilization on metal nanowire end-facets for single photon source application
Author(s): J. Kim; B. C. Lee; C. Kang; S. Y. Lee; J. H. Park; H. J. Shin
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Paper Abstract

We introduce a fabrication process to immobilize cadmium selenide (CdSe) Quantum Dots (QDs) on end-facets of metal nanowires, which can be possibly used as a cavity-free unidirectional single photon source with high coupling efficiency due to high Purcell factor. Nanowires were fabricated using E-beam lithography, E-beam evaporation, and lift-off process and finally covered with chemically deposited silicon dioxide (SiO2) layer. End-facets of metal nanowires were defined using wet etching process. QD immobilization was accomplished through surface modifications on both metal and QD surfaces. We immobilized thiol (-SH) functionalized 15 base pair (bp) ssDNA on Au nanowire surface to hybridize with its complimentary amine (- NH3) functionalized 15bp ssDNA and conjugated the amine functionalized 15bp ssDNA with QD. Presenting QD immobilization method showed high selectivity between metal nanowire and SiO2 surfaces.

Paper Details

Date Published: 16 February 2010
PDF: 5 pages
Proc. SPIE 7591, Advanced Fabrication Technologies for Micro/Nano Optics and Photonics III, 759113 (16 February 2010); doi: 10.1117/12.842916
Show Author Affiliations
J. Kim, Korea Univ. (Korea, Republic of)
Korea Institute of Science and Technology (Korea, Republic of)
B. C. Lee, Korea Institute of Science and Technology (Korea, Republic of)
C. Kang, Korea Univ. (Korea, Republic of)
Korea Institute of Science and Technology (Korea, Republic of)
S. Y. Lee, Korea Institute of Science and Technology (Korea, Republic of)
J. H. Park, Korea Univ. (Korea, Republic of)
H. J. Shin, Korea Institute of Science and Technology (Korea, Republic of)


Published in SPIE Proceedings Vol. 7591:
Advanced Fabrication Technologies for Micro/Nano Optics and Photonics III
Winston V. Schoenfeld; Jian Jim Wang; Marko Loncar; Thomas J. Suleski, Editor(s)

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