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Proceedings Paper

Accurate characterization of free carrier refraction in InP
Author(s): Leonel P. Gonzalez; Srinivasan Krishnamurthy; Shekhar Guha
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Paper Abstract

Using recently published results of intrinsic and free carrier nonlinear absorption coefficients in InP, nonlinear refraction was investigated at 1.064 μm using ns duration lasers to characterize refraction from generated free carriers. A phase retrieval algorithm was implemented to determine the amplitude and phase profiles of the incident beam. Accurate spatial and temporal profiles of the incident field were used to model nonlinear propagation through and beyond the sample. With the sample held fixed at focus and the incident energy increased, images of the transmitted beam a fixed distance away were recorded as a function of irradiance. Excellent agreement was observed between recorded beam images and those generated from the numerical model.

Paper Details

Date Published: 17 February 2010
PDF: 5 pages
Proc. SPIE 7582, Nonlinear Frequency Generation and Conversion: Materials, Devices, and Applications IX, 75821N (17 February 2010); doi: 10.1117/12.842911
Show Author Affiliations
Leonel P. Gonzalez, Air Force Research Lab. (United States)
Srinivasan Krishnamurthy, SRI International (United States)
Shekhar Guha, Air Force Research Lab. (United States)

Published in SPIE Proceedings Vol. 7582:
Nonlinear Frequency Generation and Conversion: Materials, Devices, and Applications IX
Peter E. Powers, Editor(s)

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