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Proceedings Paper

Novel device concepts for high-efficiency InGaN-based light-emitting diodes
Author(s): Hongping Zhao; Guangyu Liu; Yik-Khoon Ee; Xiao-Hang Li; Hua Tong; Jing Zhang; G. S. Huang; Nelson Tansu
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Paper Abstract

Novel staggered InGaN quantum wells (QWs) and type-II InGaN-GaNAs QWs with improved momentum matrix element lead to improved internal quantum efficiency for green-emitting light-emitting diodes (LEDs). Approaches for enhancing internal quantum efficiency, light extraction efficiency, and efficiency-droop in nitride LEDs are discussed.

Paper Details

Date Published: 12 March 2010
PDF: 7 pages
Proc. SPIE 7602, Gallium Nitride Materials and Devices V, 76021G (12 March 2010); doi: 10.1117/12.842869
Show Author Affiliations
Hongping Zhao, Lehigh Univ. (United States)
Guangyu Liu, Lehigh Univ. (United States)
Yik-Khoon Ee, Lehigh Univ. (United States)
Xiao-Hang Li, Lehigh Univ. (United States)
Hua Tong, Lehigh Univ. (United States)
Jing Zhang, Lehigh Univ. (United States)
G. S. Huang, Lehigh Univ. (United States)
Nelson Tansu, Lehigh Univ. (United States)

Published in SPIE Proceedings Vol. 7602:
Gallium Nitride Materials and Devices V
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Cole W. Litton; Joachim Piprek; Euijoon Yoon, Editor(s)

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