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Proceedings Paper

Growth of InAs/Sb:GaAs quantum dots by the antimony surfactant mediated metal organic chemical vapor deposition for laser fabrication in the 1.3 μm band
Author(s): Denis Guimard; Damien Bordel; Mitsuru Ishida; Masao Nishioka; Yuki Wakayama; Yu Tanaka; Hisao Sudo; Tsuyoshi Yamamoto; Hayato Kondo; Mitsuru Sugawara; Yasuhiko Arakawa
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Paper Abstract

We present a general method that improves the emission efficiency of InAs quantum dots (QDs) fabricated by antimony surfactant-mediated growth. Unlike conventional InAs/GaAs QDs, we show that the control of the interface properties of the InAs/Sb:GaAs QDs is crucial. Our method consists in growing InAs QDs on an antimony-irradiated GaAs surface, in order to exploit the surfactant properties of antimony, and then removing the excess segregated antimony by applying a high arsenic pressure before capping. In such a way, one benefits from the advantages of the antimony-surfactant mediated growth (high density QDs, no coalescence, no emission blueshift after annealing), without the detrimental formation of antimony-induced non-radiative defects. We show that the lasing characteristics of InAs/Sb:GaAs QD lasers grown by metal organic chemical vapor deposition in the 1.3 μm band are drastically improved, with a reduced threshold current density and higher internal quantum efficiency. These studies advance the understanding of key processes in antimony-mediated growth of InAs QDs and will allow full utilization of its advantages for integration in opto-electronic devices.

Paper Details

Date Published: 24 February 2010
PDF: 11 pages
Proc. SPIE 7610, Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling VII, 76100D (24 February 2010); doi: 10.1117/12.842864
Show Author Affiliations
Denis Guimard, Institute for Nano Quantum Information Electronics, The Univ. of Tokyo (Japan)
QD Laser Inc. (Japan)
Damien Bordel, Institute for Nano Quantum Information Electronics, The Univ. of Tokyo (Japan)
LIMMS/CNRS-IIS, The Univ. of Tokyo (Japan)
Mitsuru Ishida, Institute for Nano Quantum Information Electronics, The Univ. of Tokyo (Japan)
Masao Nishioka, Institute of Industrial Science, The Univ. of Tokyo (Japan)
Yuki Wakayama, Institute of Industrial Science, The Univ. of Tokyo (Japan)
Yu Tanaka, Fujitsu Labs., Ltd. (Japan)
Hisao Sudo, Fujitsu Labs., Ltd. (Japan)
Tsuyoshi Yamamoto, Fujitsu Labs., Ltd. (Japan)
Hayato Kondo, QD Laser Inc. (Japan)
Mitsuru Sugawara, Fujitsu Labs., Ltd. (Japan)
QD Laser Inc. (Japan)
Yasuhiko Arakawa, Institute for Nano Quantum Information Electronics, The Univ. of Tokyo (Japan)
Institute of Industrial Science, The Univ. of Tokyo (Japan)
LIMMS/CNRS-IIS, The Univ. of Tokyo (Japan)


Published in SPIE Proceedings Vol. 7610:
Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling VII
Kurt G. Eyink; Frank Szmulowicz; Diana L. Huffaker, Editor(s)

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