Share Email Print
cover

Proceedings Paper

Modeling and simulation of AlGaAs/GaAs QW DBR silicon dual junction photovoltaic devices
Author(s): Hamid Z. Fardi; Bart Van Zeghbroeck
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

This paper investigates the validation and design of a new high efficiency photovoltaic cell through modeling and simulation. The goal of this article is present the absorption and recombination-generation model of the simulation program for the current-voltage analysis and optimization of MQW's AlGaAs/GaAs solar cells. In an ideal device structure, an efficiency as high as 45% can be achieved by combining a standard silicon single-crystalline cell with a GaAs/AlGaAs multi-QW structure enclosed in a light-confining structure such AlGaAs/GaAs DBR. The predicted efficiency and the analysis is for an ideal crystalline cell, which does not include shadowing effects, reflection and recombination of minority carriers. This combination makes maximum use of the absorption in the silicon and the addition of GaAs QW and selective reflector between the two junction devices boost the efficiency A possible practical design implementation is the use of a transparent contact between the two cells such as ITO and the wafer bonding of the two cells.

Paper Details

Date Published: 25 February 2010
PDF: 9 pages
Proc. SPIE 7597, Physics and Simulation of Optoelectronic Devices XVIII, 759723 (25 February 2010); doi: 10.1117/12.842719
Show Author Affiliations
Hamid Z. Fardi, Univ. of Colorado, Denver (United States)
Bart Van Zeghbroeck, Univ. of Colorado at Boulder (United States)


Published in SPIE Proceedings Vol. 7597:
Physics and Simulation of Optoelectronic Devices XVIII
Bernd Witzigmann; Fritz Henneberger; Yasuhiko Arakawa; Marek Osinski, Editor(s)

© SPIE. Terms of Use
Back to Top