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Proceedings Paper

Dynamics of percolation phenomena in colloidal printing inks
Author(s): Michael Angelo-Anthony Daniele; Alexandra L. Foguth; Parul Rungta; Iurii Bandera; Volodymyr Tsyalkovskyy; Stephen H. Foulger
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Paper Abstract

The conductivity of colloidal inks composed of poly(ethylene glycol) (PEG), 2-(4-tert-Butylphenyl)-5-(4-biphenylyl)- 1,3,4-oxadiazole (tPBD) or polystyrene-tPBD copolymerized colloids (PS-PBD) and carbon black (CB) were investigated to establish their percolation characteristics. The PS-PBD colloid supported inks (PEG/PS-PBD/CB) exhibited reduced percolation thresholds and enhanced conductivities above that of the individually carbon filled (PEG/CB) and small molecule blend (PEG/tPBD/CB) inks. Based on the DC conductivity analysis, the percolation threshold of the PEG/PS-PBD/CB composites was 3.6 vol%. The electrical resistivity of the PEG/PS-PBD/CB ink is lower than that of PEG/PBD/CB ink with the same CB content in the percolation region by 8 orders of magnitude. The percolation reduction was attributed to the heterogeneous dispersion of conductive filler aggregates "bridged" by PSPBD colloids. The aggregated dispersion of PS-PBD colloids in the ink matrix was characterized by photoluminescence spectroscopy (PL) which produced a red-shift at high concentrations, signaling the required proximity of PS-PBD colloids to form energy transfer complexes.

Paper Details

Date Published: 17 February 2010
PDF: 9 pages
Proc. SPIE 7591, Advanced Fabrication Technologies for Micro/Nano Optics and Photonics III, 759111 (17 February 2010); doi: 10.1117/12.842647
Show Author Affiliations
Michael Angelo-Anthony Daniele, Clemson Univ. (United States)
Alexandra L. Foguth, Clemson Univ. (United States)
Parul Rungta, Clemson Univ. (United States)
Iurii Bandera, Clemson Univ. (United States)
Volodymyr Tsyalkovskyy, Clemson Univ. (United States)
Stephen H. Foulger, Clemson Univ. (United States)


Published in SPIE Proceedings Vol. 7591:
Advanced Fabrication Technologies for Micro/Nano Optics and Photonics III
Winston V. Schoenfeld; Jian Jim Wang; Marko Loncar; Thomas J. Suleski, Editor(s)

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