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Proceedings Paper

Suppression of carrier leakage in 4.8 μm - emitting quantum cascade lasers
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Paper Abstract

In this work we show that by using both deep quantum wells and tall barriers in the active regions of quantum cascade (QC)-laser structures and by tapering the conduction-band edge of both injector an extractor regions one can significantly reduce the leakage of the injected carriers. Threshold-current, Jth and differential-quantum efficiency, ηd characteristic temperatures, T0 and T1, values as high as 278 K and 285 K are obtained to 90 °C heatsink temperature, which means that Jth and ηd vary ~ 2.5 slower over the 20-90 °C temperature range than in conventional QC devices. Modified equations for Jth and ηd are derived. In particular, the equation for ηd includes, for the first time, its dependence on heatsink temperature. A model for the thermal excitation of injected carriers from the upper lasing level to upper active-region energy states from where they relax to lower active-region energy states or get scattered to the upper Γ miniband is employed to estimate carrier leakage. Good agreement with experiment is obtained for both conventional QC lasers and deep-well (DW)-QC lasers.

Paper Details

Date Published: 12 February 2010
PDF: 9 pages
Proc. SPIE 7616, Novel In-Plane Semiconductor Lasers IX, 76160N (12 February 2010); doi: 10.1117/12.842593
Show Author Affiliations
D. Botez, Univ. of Wisconsin-Madison (United States)
J. C. Shin, Univ. of Wisconsin-Madison (United States)
L. J. Mawst, Univ. of Wisconsin-Madison (United States)
I. Vurgaftman, U.S. Naval Research Lab. (United States)
J. R. Meyer, U.S. Naval Research Lab. (United States)
S. Kumar, Massachussets Institute of Technology (United States)


Published in SPIE Proceedings Vol. 7616:
Novel In-Plane Semiconductor Lasers IX
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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