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Proceedings Paper

Theory of high field carrier transport and impact ionization in ZnO
Author(s): Francesco Bertazzi; Michele Penna; Michele Goano; Enrico Bellotti
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Paper Abstract

We present a full band Monte Carlo study of high field carrier transport and impact ionization properties of wurtzite ZnO. The proposed model is based on an accurate electronic structure calculated with a nonlocal empirical pseudopotential method and a phonon dispersion determined with density functional theory. The model includes the full details of the lowest eight conduction bands and the top six valence bands derived from the empirical pseudopotential method and a numerically calculated impact ionization transition rate based on a wave-vector dependent dielectric function. The carrier-phonon interaction is treated using the rigid pseudoion formalism, thus removing adjustable parameters such as deformation potential coefficients. Electric-field-induced interband transitions are included in the model by the direct solution of the time-dependent multiband Schrödinger equation. The hole ionization coefficient is found to be very low compared to the electron ionization coefficient. The low ratio of hole and electron ionization coefficients k = β/α holds the promise for high speed and low noise avalanche photodetection in the ultraviolet spectral range.

Paper Details

Date Published: 15 February 2010
PDF: 10 pages
Proc. SPIE 7603, Oxide-based Materials and Devices, 760303 (15 February 2010); doi: 10.1117/12.842562
Show Author Affiliations
Francesco Bertazzi, Boston Univ. (United States)
Politecnico di Torino (Italy)
Michele Penna, Boston Univ. (United States)
Politecnico di Torino (Italy)
Michele Goano, Politecnico di Torino (Italy)
Enrico Bellotti, Boston Univ. (United States)

Published in SPIE Proceedings Vol. 7603:
Oxide-based Materials and Devices
Ferechteh Hosseini Teherani; David C. Look; Cole W. Litton; David J. Rogers, Editor(s)

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