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Proceedings Paper

Ammonothermal growth of GaN substrates
Author(s): R. Dwiliński; R. Doradziński; J. Garczyński; L. Sierzputowski; R. Kucharski; M. Zajac; M. Rudziński; W. Strupiński; J. Serafińczuk; R. Kudrawiec
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Paper Abstract

In this paper some physical and chemical basis of ammonothermal method of bulk gallium nitride synthesis in ammonobasic route. Excellent structural and wide spectrum of electrical parameters of truly bulk GaN crystals obtained this way are revealed. In considered crystals a low dislocation density (5 x 103 - 5 x 104 cm-2) is attainable. At the same time the crystal lattice is extremely flat and the rocking curve is very narrow (FWHM=16 arcsec). Both polar and nonpolar ammonothermal GaN substrates enabled to grow high optical quality, strain-free homoepitaxial layers

Paper Details

Date Published: 12 March 2010
PDF: 10 pages
Proc. SPIE 7602, Gallium Nitride Materials and Devices V, 76020C (12 March 2010); doi: 10.1117/12.842539
Show Author Affiliations
R. Dwiliński, Ammono Sp. z o.o. (Poland)
R. Doradziński, Ammono Sp. z o.o. (Poland)
J. Garczyński, Ammono Sp. z o.o. (Poland)
L. Sierzputowski, Ammono Sp. z o.o. (Poland)
R. Kucharski, Ammono Sp. z o.o. (Poland)
M. Zajac, Ammono Sp. z o.o. (Poland)
M. Rudziński, Institute of Electronic Materials Technology (Poland)
W. Strupiński, Institute of Electronic Materials Technology (Poland)
J. Serafińczuk, Wroclaw Univ. of Technology (Poland)
R. Kudrawiec, Wroclaw Univ. of Technology (Poland)


Published in SPIE Proceedings Vol. 7602:
Gallium Nitride Materials and Devices V
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Cole W. Litton; Joachim Piprek; Euijoon Yoon, Editor(s)

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