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Proceedings Paper

Thermal conductivity measurement of pulsed-MOVPE InN alloy grown on GaN/Sapphire by 3ω method
Author(s): Hua Tong; Jing Zhang; Hongping Zhao; Guangyu Liu; Vincent A. Handara; Juan A. Herbsommer; Nelson Tansu
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Paper Abstract

The thermal conductivity of high-quality narrow-bandgap (0.77eV) InN grown on GaN on sapphire substrate by pulsed- MOVPE method was measured and analyzed. To accurately extract the thermal conductivities of GaN and InN films grown on sapphire substrate, 2D multilayer thermal diffusion model and extended 3ω slope technique are employed. The thermal conductivity of sapphire substrate measured is 41 W/(mK). The thermal conductivity of undoped GaN film is measured as 108 W/(mK). High-quality pulsed-MOVPE grown InN film exhibits thermal conductivity of 126 W/(mK), which is higher in comparison to the previously-reported value of porous InN ceramics 45 W/(mK), yet lower than the theoretical value 176 W/(mK) based on phonon scattering.

Paper Details

Date Published: 12 March 2010
PDF: 9 pages
Proc. SPIE 7602, Gallium Nitride Materials and Devices V, 76020U (12 March 2010); doi: 10.1117/12.842509
Show Author Affiliations
Hua Tong, Lehigh Univ. (United States)
Jing Zhang, Lehigh Univ. (United States)
Hongping Zhao, Lehigh Univ. (United States)
Guangyu Liu, Lehigh Univ. (United States)
Vincent A. Handara, Lehigh Univ. (United States)
Juan A. Herbsommer, Lehigh Univ. (United States)
Nelson Tansu, Lehigh Univ. (United States)


Published in SPIE Proceedings Vol. 7602:
Gallium Nitride Materials and Devices V
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Cole W. Litton; Joachim Piprek; Euijoon Yoon, Editor(s)

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