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Proceedings Paper

Infrared detector epitaxial designs for suppression of surface leakage current
Author(s): G. W. Wicks; G. R. Savich; J. R. Pedrazzani; S. Maimon
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Paper Abstract

Excessive surface leakage currents, and their associated noise, deteriorate the performance of infrared photodetectors. The conventional approach to suppress surface leakage is post-epitaxy deposition of polycrystalline or amorphous passivation layers. Disadvantages of such passivation layers are the cost and complexity of the required additional processing steps, and the fact that they do not always work well. An alternative approach, presented here, is to design the photodetectors' epitaxial structures so that surface leakage currents are suppressed without the need for ex-situ deposition of passivation layers. Two examples of such epitaxial designs are the nBn detector and the unipolar barrier photodiode.

Paper Details

Date Published: 23 January 2010
PDF: 8 pages
Proc. SPIE 7608, Quantum Sensing and Nanophotonic Devices VII, 760822 (23 January 2010); doi: 10.1117/12.842427
Show Author Affiliations
G. W. Wicks, Institute of Optics, Univ. of Rochester (United States)
G. R. Savich, Institute of Optics, Univ. of Rochester (United States)
J. R. Pedrazzani, Institute of Optics, Univ. of Rochester (United States)
S. Maimon, Institute of Optics, Univ. of Rochester (United States)


Published in SPIE Proceedings Vol. 7608:
Quantum Sensing and Nanophotonic Devices VII
Manijeh Razeghi; Rengarajan Sudharsanan; Gail J. Brown, Editor(s)

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