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Proceedings Paper

Heterogeneous integration of thin film compound semiconductor lasers and SU8 waveguides on SiO2/Si
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Paper Abstract

We present the heterogeneous integration of a 3.8 μm thick InGaAs/GaAs edge emitting laser that was metal-metal bonded to SiO2/Si and end-fire coupled into a 2.8 μm thick tapered SU8 polymer waveguide integrated on the same substrate. The system was driven in pulsed mode and the waveguide output was captured on an IR imaging array to characterize the mode. The waveguide output was also coupled into a multimode fiber, and into an optical head and spectrum analyzer, indicating lasing at ~997 nm and a threshold current density of 250 A/cm2.

Paper Details

Date Published: 15 February 2010
PDF: 8 pages
Proc. SPIE 7607, Optoelectronic Interconnects and Component Integration IX, 76070I (15 February 2010); doi: 10.1117/12.842379
Show Author Affiliations
Sabarni Palit, Duke Univ. (United States)
Jeremy Kirch, Univ. of Wisconsin-Madison (United States)
Luke Mawst, Univ. of Wisconsin-Madison (United States)
Thomas Kuech, Univ. of Wisconsin-Madison (United States)
Nan Marie Jokerst, Duke Univ. (United States)


Published in SPIE Proceedings Vol. 7607:
Optoelectronic Interconnects and Component Integration IX
Alexei L. Glebov; Ray T. Chen, Editor(s)

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