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Proceedings Paper

Saturation characteristics of InGaAsP-InP bulk SOA
Author(s): Amita Kapoor; Enakshi K. Sharma; Wolfgang Freude; Juerg Leuthold
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Paper Abstract

Semiconductor optical amplifiers (SOAs) can be used as linear in-line amplifiers for extended-reach passive optical networks, or as gain/phase-switchable devices. For these applications, gain, bandwidth and saturation power are important. The saturation power can be increased by decreasing the confinement factor and by increasing the length such that the overall gain remains constant. In this paper we investigate the saturation characteristics of 1.55μm InGaAsP-InP bulk SOA. We do so by using the physically based simulation tool ATLAS. The simulation tool ATLAS supports simulation of semiconductor lasers only, however making the mirror reflectivities small, the lasing threshold is increased such that lasers are essentially reduced to amplifiers. Next, for investigating the saturation characteristics of SOA, the amplifier gain should be influenced by injecting an optical light power. However, ATLAS cannot simulate the required source directly. Instead, we use in the electron rate equation simultaneously two competing independent models for spontaneous radiative recombination, namely the so-called general model (total recombination rate BnT p with bimolecular recombination coefficient B, electron and hole concentrations nT and p) and the standard model for recombination due to amplified spontaneous emission into the mode under consideration (determined by the product of Fermi functions for electrons and holes). In the photon rate equation, only the standard model is used. We then increase B, and thus simulate a decrease of the carrier concentration that would physically result from an external optical signal. We show that under conditions of constant injection current and device length an n-doping (p-doping) of the active layer increases (decreases) the input saturation power. In addition we observe that for constant injection current and amplifier gain, a p-doping (n-doping) of the active layer increases (decreases) both the input and output saturation powers because of an reduced (slightly increased) Auger-dominated carrier lifetime.

Paper Details

Date Published: 25 February 2010
PDF: 10 pages
Proc. SPIE 7597, Physics and Simulation of Optoelectronic Devices XVIII, 75971I (25 February 2010); doi: 10.1117/12.842350
Show Author Affiliations
Amita Kapoor, Univ. of Delhi (India)
Enakshi K. Sharma, Univ. of Delhi, South Campus (India)
Wolfgang Freude, Karlsruhe Institute of Technology (Germany)
Juerg Leuthold, Karlsruhe Institute of Technology (Germany)


Published in SPIE Proceedings Vol. 7597:
Physics and Simulation of Optoelectronic Devices XVIII
Bernd Witzigmann; Fritz Henneberger; Yasuhiko Arakawa; Marek Osinski, Editor(s)

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