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Proceedings Paper

Performance improvement of InGaN-based laser diodes by epitaxial layer structure design
Author(s): Jianping Liu; Yun Zhang; Zachary Lochner; Seong-soo Kim; Hyunsoo Kim; Jae-Hyun Ryou; Shyh-Chiang Shen; P. Doug Yoder; Russell D. Dupuis; Qiyuan Wei; Kewei Sun; Alec Fischer; Fernando Ponce
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Paper Abstract

Blue laser diode (LD) structures with GaN waveguide layers and with In0.03Ga0.97N waveguide layers were grown. A comparison study showed In0.03Ga0.97N waveguide layers significantly enhance the LD performance. The mechanism behind this was investigated using reciprocal space mapping of X-ray diffraction and time-resolved cathodoluminescence measurements. Room-temperature lasing of laser diodes at 454.6 nm was realized for LD structure with In0.03Ga0.97N waveguide layers.

Paper Details

Date Published: 17 March 2010
PDF: 6 pages
Proc. SPIE 7602, Gallium Nitride Materials and Devices V, 760219 (17 March 2010); doi: 10.1117/12.842334
Show Author Affiliations
Jianping Liu, Georgia Institute of Technology (United States)
Yun Zhang, Georgia Institute of Technology (United States)
Zachary Lochner, Georgia Institute of Technology (United States)
Seong-soo Kim, Georgia Institute of Technology (United States)
Hyunsoo Kim, Chonbuk National Univ. (Korea, Republic of)
Jae-Hyun Ryou, Georgia Institute of Technology (United States)
Shyh-Chiang Shen, Georgia Institute of Technology (United States)
P. Doug Yoder, Georgia Institute of Technology (United States)
Russell D. Dupuis, Georgia Institute of Technology (United States)
Qiyuan Wei, Arizona State Univ. (United States)
Kewei Sun, Arizona State Univ. (United States)
Alec Fischer, Arizona State Univ. (United States)
Fernando Ponce, Arizona State Univ. (United States)


Published in SPIE Proceedings Vol. 7602:
Gallium Nitride Materials and Devices V
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Cole W. Litton; Joachim Piprek; Euijoon Yoon, Editor(s)

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