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Proceedings Paper

Achieving p-InxGa1-xN alloys with high In contents
Author(s): B. N Pantha; A. Sedhain; J. Li; J. Y. Lin; H. X. Jiang
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Paper Abstract

Mg-doped InxGa1-xN alloys were grown by metal organic chemical vapor deposition (MOCVD) on semi-insulating c-GaN/sapphire templates. Hall effect measurements showed that Mg-doped InxGa1-xN epilayers are p-type for x up to 0.35. Mg-acceptor levels (EA) as a function of x, (x up to 0.35), were experimentally evaluated from the temperature dependent hole concentration. The observed EA in Mg-doped In0.35Ga0.65N alloys was about 43 meV, which is roughly 4 times smaller than that of Mg doped GaN. A room temperature resistivity as low as 0.4 Ωcm (with a hole concentration ~5 1018 cm-3 and hole mobility ~3 cm2/Vs) was obtained in Mg-doped In0.22Ga0.78N. It was observed that the photoluminescence (PL) intensity associated with the Mg related emission line decreases exponentially with x. The Mg energy levels in InGaN alloys obtained from PL measurements are consistent with those obtained from Hall-effect measurements.

Paper Details

Date Published: 16 March 2010
PDF: 7 pages
Proc. SPIE 7602, Gallium Nitride Materials and Devices V, 76020Z (16 March 2010); doi: 10.1117/12.842313
Show Author Affiliations
B. N Pantha, Texas Tech Univ. (United States)
A. Sedhain, Texas Tech Univ. (United States)
J. Li, Texas Tech Univ. (United States)
J. Y. Lin, Texas Tech Univ. (United States)
H. X. Jiang, Texas Tech Univ. (United States)


Published in SPIE Proceedings Vol. 7602:
Gallium Nitride Materials and Devices V
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Cole W. Litton; Joachim Piprek; Euijoon Yoon, Editor(s)

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