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Proceedings Paper

Bandwidth enhancement in an injection-locked quantum dot laser operating at 1.31-μm
Author(s): N. A. Naderi; M. Pochet; V. Kovanis; L. F. Lester
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Paper Abstract

The high-speed modulation characteristics of an injection-locked quantum dot Fabry-Perot (FP) semiconductor laser operating at 1310-nm under strong injection are investigated experimentally with a focus on the enhancement of the modulation bandwidth. The coupled system consists of a directly-modulated Quantum Dot (QD) slave injected-locked by a distributed feedback (DFB) laser as the master. At particular injection strengths and zero detuning cases, a unique modulation response is observed that differs from the typical modulation response observed in injection-locked systems. This unique response is characterized by a rapid low-frequency rise along with a slow high-frequency roll-off that enhances the 3-dB bandwidth of the injection-locked system at the expense of losing modulation efficiency of about 20 dB at frequencies below 1 GHz. Such behavior has been previously observed both experimentally and theoretically in the high-frequency response characteristic of an injection-locked system using an externally-modulated master; however, the results shown here differ in that the slave laser is directly-modulated. The benefit of the observed response is that it takes advantage of the enhancement of the resonance frequency achieved through injection-locking without experiencing the low frequency dip that significantly limits the useful bandwidth in the conventional injection-locked response. The second benefit of this unique response is the improvement in the high frequency roll-off that extends the bandwidth. Finally a 3-dB bandwidth improvement of greater than 8 times compared to the free-running slave laser has been achieved.

Paper Details

Date Published: 26 February 2010
PDF: 12 pages
Proc. SPIE 7597, Physics and Simulation of Optoelectronic Devices XVIII, 759719 (26 February 2010); doi: 10.1117/12.842284
Show Author Affiliations
N. A. Naderi, Ctr. for High Technology Materials, The Univ. of New Mexico (United States)
M. Pochet, Ctr. for High Technology Materials, The Univ. of New Mexico (United States)
V. Kovanis, Air Force Research Lab. (United States)
L. F. Lester, Ctr. for High Technology Materials, The Univ. of New Mexico (United States)


Published in SPIE Proceedings Vol. 7597:
Physics and Simulation of Optoelectronic Devices XVIII
Bernd Witzigmann; Fritz Henneberger; Yasuhiko Arakawa; Marek Osinski, Editor(s)

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