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Proceedings Paper

Improved performance of GaAsSb/GaAs SQW lasers
Author(s): N. Hossain; S. R. Jin; S. J. Sweeney; S.-Q. Yu; S. R. Johnson; D. Ding; Y.-H. Zhang
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Paper Abstract

This paper reports the improvements and limitations of MBE grown 1.3μm GaAsSb/GaAs single QW lasers. At room temperature, the devices show a low threshold current density (Jth) of 253 Acm-2, a transparent current density of 98 Acm-2, an internal quantum efficiency of 71%, an optical loss of 18 cm-1 and a characteristic temperature (T0) = 51K. The defect related recombination in these devices is negligible and the primary non-radiative current path has a stronger dependence on the carrier density than the radiative current contributing to ~84% of the threshold current at RT. From high hydrostatic pressure dependent measurements, a slight decrease followed by the strong increase in threshold current with pressure is observed, suggesting that the device performance is limited to both Auger recombination and carrier leakage.

Paper Details

Date Published: 12 February 2010
PDF: 5 pages
Proc. SPIE 7616, Novel In-Plane Semiconductor Lasers IX, 761608 (12 February 2010); doi: 10.1117/12.842253
Show Author Affiliations
N. Hossain, Univ. of Surrey (United Kingdom)
S. R. Jin, Univ. of Surrey (United Kingdom)
S. J. Sweeney, Univ. of Surrey (United Kingdom)
S.-Q. Yu, Arizona State Univ. (United States)
S. R. Johnson, Arizona State Univ. (United States)
D. Ding, Arizona State Univ. (United States)
Y.-H. Zhang, Arizona State Univ. (United States)


Published in SPIE Proceedings Vol. 7616:
Novel In-Plane Semiconductor Lasers IX
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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