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Proceedings Paper

Linewidth enhancement factor and dynamical response of an injection-locked quantum-dot Fabry-Perot laser at 1310nm
Author(s): M. Pochet; N. A. Naderi; N. Terry; V. Kovanis; L. F. Lester
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Paper Abstract

This work investigates the linewidth enhancement factor (alpha-factor) and stability of an optically-injected InAs/InGaAs quantum-dot Fabry-Perot laser. Using the injection-locking technique, the above threshold alpha-factor is measured to be as low as 0.6 at 1.3X the threshold current. The below threshold alpha-factor is also measured using the Hakki-Paoli technique. The measured alpha-factor values are used to simulate the dynamic response (stable locking, period-one, period-doubling, or chaos) in the context of single-mode rate equations under zero-detuning injection conditions for external injected power ratios ranging from -11dB to +15dB and slave current bias levels of 1.3X, 2X, and 2.6X threshold. Legacy literature has shown that optically-injected diode lasers typically follow the period-doubling route into a chaotic region as the injection level is increased. Simulations show that at 2X the threshold current, a small region of period-one operation will be observed followed by stable-locking as the injection ratio is increased. This predominantly stable behavior is driven largely by the low alpha-factor. Experimental results support this prediction, where under zero-detuning conditions, only unlocked and stable-locking operation is observed. Experimentally, periodone operation was not observed at a slave laser bias current of 2X threshold, as it was predicted to occur below an external power ratio of -20 dB, a level which was not attainable in this work. Such findings suggest that a quantum-dot device can be employed in an optically-injected configuration for photonic tunable-clock applications.

Paper Details

Date Published: 12 February 2010
PDF: 12 pages
Proc. SPIE 7616, Novel In-Plane Semiconductor Lasers IX, 76160F (12 February 2010); doi: 10.1117/12.842161
Show Author Affiliations
M. Pochet, The Univ. of New Mexico (United States)
N. A. Naderi, The Univ. of New Mexico (United States)
N. Terry, Air Force Research Lab. (United States)
V. Kovanis, Air Force Research Lab. (United States)
L. F. Lester, The Univ. of New Mexico (United States)

Published in SPIE Proceedings Vol. 7616:
Novel In-Plane Semiconductor Lasers IX
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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