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Proceedings Paper

Progress of blue and green InGaN laser diodes
Author(s): Stephan Lutgen; Adrian Avramescu; Teresa Lermer; Marc Schillgalies; Desiree Queren; Jens Müller; Dimitri Dini; Andreas Breidenassel; Uwe Strauss
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Paper Abstract

Mobile laser projection is of great commercial interest. Today, a key parameter in embedded mobile applications is the optical output power and wall plug efficiency. We report improvements of the performance of true blue single mode InGaN laser at 450nm with output power of more than 200mW in cw operation for temperatures between 20°C and 60°C. We succeeded in temperature independent high wall plug efficiency of 15-18% for stable output power levels from 100 to 200mW with estimated life times >4000h in cw operation. Furthermore, we present pioneering studies on long green InGaN laser diodes. The technological challenge is to achieve InGaN-quantum wells with sufficiently high material quality for lasing. We investigate the density of non radiative defects by electro-optical measurements confirming that low defect densities are essential for stimulated emission. Laser operation at 516nm with more than 50mW output power in cw operation is demonstrated in combination with a high wall plug efficiency of 2.7%.

Paper Details

Date Published: 12 February 2010
PDF: 8 pages
Proc. SPIE 7616, Novel In-Plane Semiconductor Lasers IX, 76160G (12 February 2010); doi: 10.1117/12.842131
Show Author Affiliations
Stephan Lutgen, OSRAM Opto Semiconductors GmbH (Germany)
Adrian Avramescu, OSRAM Opto Semiconductors GmbH (Germany)
Teresa Lermer, OSRAM Opto Semiconductors GmbH (Germany)
Marc Schillgalies, OSRAM Opto Semiconductors GmbH (Germany)
Desiree Queren, OSRAM Opto Semiconductors GmbH (Germany)
Jens Müller, OSRAM Opto Semiconductors GmbH (Germany)
Dimitri Dini, OSRAM Opto Semiconductors GmbH (Germany)
Andreas Breidenassel, OSRAM Opto Semiconductors GmbH (Germany)
Uwe Strauss, OSRAM Opto Semiconductors GmbH (Germany)


Published in SPIE Proceedings Vol. 7616:
Novel In-Plane Semiconductor Lasers IX
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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